JOLYWOOD – Jolywood announced its latest research and development results. The J-TOPCon 2.0 cell is mass-produced based on the passivation contact technology of a new generation of tunneling oxide layer and in-situ doped amorphous silicon deposition without winding plating. The average efficiency can achieve more than 24%, and the yield can reach over 97%. This release has not only received support from the government and institutions, but also attracted widespread attention from the media and industry partners.
Lin Jianwei, Chairman of Jolywood Group, is very confident in the application and development of J-TOPCon 2.0 technology. He said: “The progress of TOPCon technology this time is our dream goal for many years. This high quality but inexpensive wonderful product, push TOPCon manufacturing technology to a new height. J-TOPCon2.0 will become the world’s most cost-effective product, with high efficiency, high power generation, and high investment income. We are willing to share this new technology with our peers and contribute to the production and popularization of high-efficiency solar cells.”
Jolywood TOPCon 1.0 manufacturing process and technology are based on N-type silicon wafers, through the tunnel oxide layer and doped polysilicon to achieve passivation contact, greatly improve the efficiency of the cells. After years of R&D and production debugging, although Jolywood’s mass production efficiency has reached the world’s leading 23.5%+, because the tunnel oxide layer is oxidized at high temperature, amorphous silicon is deposited by LPCVD, ion implantation is doped with phosphorus, and the process is completed by high temperature annealing, polysilicon winding plating and cleaning, etc. Compared with mass production of PERC cells, the production cost and yield were long-standing problems.
The new J-TOPCon 2.0 technology released this time is in cooperation with Jiangsu Jietai Optoelectronics Technology Co., Ltd. (JTech), using its original linear plasma source technology to jointly develop a new set of POPAID technology (plasma oxidation and plasma assisted in-situ doping Deposition). POPAID uses a chain platform to transmit the carrier board, which can simultaneously complete the tunneling oxidation and doped amorphous silicon deposition without breaking the vacuum, and truly achieve no winding plating. POPAID technology is a new concept and technology innovated in China. It is a rare Chinese original and world-leading coating concept in the field of photovoltaic cell manufacturing.
A number of innovative processes have been implemented on the POPAID equipment. The formation of plasma silicon oxide (PO) causes no damage to the surface, and the coating thickness is within the precision range of 0.1nm, which truly realizes the sub-nano coating process control. Compared with conventional high-temperature oxidation, the tunneling passivation effect is more superior. Achieve the effect of simultaneous improvement of surface passivation and contact selectivity, with better uniformity. For the doped amorphous silicon coating (PAID) process, the equipment adopts plasma-enhanced coating process to realize the deposition of doped amorphous silicon film. After annealing, the doping concentration can be as high as 4×1020 atoms/ cm3, which is more than twice the concentration of conventional ion implantation. After the integration of the two processes, the efficiency of the J-TOPCon 2.0 cell exceeds that of conventional ion implantation by more than 0.2%, the open circuit voltage (Voc) and fill factor (FF) are improved, and the yield rate can also be increased by 2%.
The POPAID equipment technology enables one equipment to replace the existing four equipment of tubular high-temperature oxidation, tubular LPCVD, ion implantation, and plating cleaning. The production capacity of the mass production equipment reaches 8000 pieces/hour.
Due to the use of POPAID technology, the original 12 manufacturing processes of TOPCon were shortened to 9 processes. This not only improves the cell efficiency, but also improves production yield and reduces production costs, which is comparable to the high-efficiency PERC cell process. It can be said that J-TOPCon 2.0 paved the way for the mass production and promotion of a new generation of high-efficiency TOPCon cells, which is a revolutionary contribution to TOPCon technology.